· In-Line ALD with single side horizontal deposition; Half size cell pro-duction capacity does not decrease.
· Excellent AlOx passivation, high efficiency of large-size N-type cells.
· Wide process window, capacity keep the same within 3-8nm film thickness.
· Wrap coating <0.5mm, low breakagerate.
· Significant advantages in large-size thin wafer and half-side wafer.